Details

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BUY 2SA1668 https://www.utsource.net/itm/p/12553581.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	40	V
Emitter-Collector Voltage	VECE	-	-	40	V
Base-Emitter Voltage	VBE	-	-	5	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	PD	-	-	125	W
Operating Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-65	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage to the transistor.
   • Use appropriate heat sinks when operating at high power levels.

2. Mounting:

   • Ensure good thermal contact with the heat sink by using thermal compound.
   • Tighten the mounting screws to the recommended torque to avoid mechanical stress.

3. Biasing:

   • Properly bias the base-emitter junction to ensure reliable operation.
   • Use current-limiting resistors to protect the base from excessive current.

4. Testing:

   • Test the transistor in a controlled environment to verify its performance.
   • Measure the voltage and current parameters to ensure they fall within the specified limits.

5. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid static discharge which can damage the device.

6. Soldering:

   • Use a temperature-controlled soldering iron to avoid overheating the transistor.
   • Solder quickly to minimize exposure to high temperatures.

7. Applications:

   • Suitable for power amplification, switching circuits, and other high-power applications.
   • Ideal for use in audio amplifiers, power supplies, and motor control circuits.

(For reference only)