Details

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BUY 2N3773 https://www.utsource.net/itm/p/12554024.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	100	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector-Base Voltage	VCBO	-	-	100	V
Collector Current	IC	-	-	2	A
Base Current	IB	-	-	0.2	A
Power Dissipation	PT	-	-	65	W
Operating Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C
Transition Frequency	fT	-	10	-	MHz
DC Current Gain	hFE	10	50	150	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage to the device.
   • Use proper heat sinking when operating at high power levels to maintain junction temperature within safe limits.

2. Mounting:

   • Ensure good thermal contact with the heat sink to dissipate heat effectively.
   • Use insulated mounting hardware if electrical isolation is required.

3. Biasing:

   • Set the base current (I_B) appropriately to achieve the desired collector current (I_C).
   • Use a resistor in series with the base to limit the base current and protect the transistor from overdrive.

4. Storage:

   • Store in a dry, cool place to avoid moisture and temperature-related damage.
   • Handle with care to avoid mechanical stress on the leads and body.

5. Testing:

   • Use a multimeter or transistor tester to check the continuity and gain of the transistor.
   • Ensure that the device is not connected to any power source during testing to avoid accidental damage.

6. Applications:

   • Suitable for high-power amplification and switching applications.
   • Ideal for use in audio amplifiers, power supplies, and motor control circuits.

(For reference only)