Details

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BUY SGT60N60FD1PN TO-3P IGBT ORIGINAL STOCK https://www.utsource.net/itm/p/12555236.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-		600	V	Maximum collector-emitter voltage
Gate-Emitter Voltage	V GES	-15		15	V	Maximum gate-emitter voltage
Continuous Collector Current	I C	-	60	-	A	Continuous collector current at T C = 25°C
Pulse Collector Current	I CM	-	360	-	A	Non-repetitive peak pulse collector current
Power Dissipation	P D	-		180	W	Maximum power dissipation
Junction Temperature	T J	-55		175	°C	Operating junction temperature range
Storage Temperature	T STG	-55		175	°C	Storage temperature range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the TO-3P package.

2. Electrical Connections:

   • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
   • Ensure that the gate drive circuitry is designed to provide adequate drive current and voltage levels.

3. Operational Guidelines:

   • Do not exceed the maximum ratings listed in the table to prevent device failure.
   • Keep the junction temperature below the maximum limit by ensuring adequate cooling.

4. Storage and Environment:

   • Store in a dry, cool place away from direct sunlight.
   • Avoid exposure to corrosive environments.

5. Safety Precautions:

   • Always follow safe handling practices when working with high voltages and currents.
   • Use appropriate protective equipment during installation and operation.

For detailed application notes and further technical information, refer to the manufacturer’s datasheet or contact the supplier.

(For reference only)