Details

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BUY TOSHIBA 2SC2879 https://www.utsource.net/itm/p/12555547.html

Parameter	Symbol	Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0, IB = 0	-	-	60	V
Base-Emitter Voltage	VBE	IC = 150 mA, IE = 0	-	1.8	-	V
Collector Current	IC	VCE = 30 V	-	150	-	mA
Base Current	IB	VCE = 30 V	-	1.5	-	mA
DC Current Gain	hFE	IC = 150 mA, VCE = 10 V	40	150	400	-
Transition Frequency	fT	IC = 150 mA, VCE = 10 V	-	300	-	MHz
Storage Temperature	TSTG	-	-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid applying voltages or currents beyond the maximum ratings.
   • Handle the transistor with care to avoid mechanical damage.

2. Mounting:

   • Ensure proper heat sinking if operating at high power levels.
   • Follow the recommended soldering temperature and time to prevent damage.

3. Biasing:

   • Set the base current (IB) to achieve the desired collector current (IC) while maintaining the transistor within its safe operating area (SOA).

4. Testing:

   • Test the transistor under controlled conditions to ensure it meets the specified parameters.
   • Use appropriate test equipment to measure V_BE, V_CEO, and h_FE.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistor in its original packaging until ready for use to protect against static discharge.

6. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Ideal for audio amplifiers, power supplies, and other low to medium power circuits.

(For reference only)