Details
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Parameter | Description | Value |
---|---|---|
Device Type | Flash Memory | 1 Mbit (128K x 8) |
Technology | CMOS | |
Package | Plastic Dual In-Line Package (PDIP) | 28-Pin |
Operating Voltage | VCC | 5V ± 0.25V |
Programming Voltage | VPP | 12.5V ± 0.5V |
Access Time | tAA | 150 ns (max) |
Data Retention | Minimum Data Retention Time | 10 years |
Endurance | Write/Erase Cycles | 100,000 cycles (typical) |
Temperature Range | Commercial (C) | 0°C to 70°C |
Industrial (I) | -40°C to 85°C | |
Storage Temperature | Storage Temperature Range | -65°C to 150°C |
Standby Current | ICC (VCC = 5V) | 10 μA (max) |
Active Current | ICC (VCC = 5V) | 30 mA (max) |
Write Current | IPP (VPP = 12.5V) | 250 mA (max) |
Pin Configuration | Pin 1: A0, Pin 2: A1, ..., Pin 28: VPP | See datasheet for full details |
Instructions for Use
Power Supply:
- Connect VCC to +5V and VSS to GND.
- Ensure stable power supply to avoid data corruption.
Addressing:
- Apply the desired address to the address lines (A0-A16).
- Address lines should be stable during read/write operations.
Data Input/Output:
- Data is read from or written to the data lines (D0-D7).
- During write operations, ensure that the data lines are stable before applying the write pulse.
Control Signals:
- OE (Output Enable): Low to enable output.
- WE (Write Enable): Low to initiate a write cycle.
- CE (Chip Enable): Low to select the device.
- WP (Write Protect): High to allow writes, low to protect against accidental writes.
Programming:
- Apply VPP (12.5V) to the appropriate pin during programming.
- Follow the programming algorithm specified in the datasheet for correct operation.
Erase:
- The device supports sector erase and chip erase operations.
- Refer to the datasheet for specific timing and sequence requirements.
Handling:
- Handle with care to avoid static discharge.
- Store in a dry environment to prevent moisture damage.
For detailed information, refer to the AT27C010-15JC datasheet provided by the manufacturer.
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