Details
BUY FDA24N50F https://www.utsource.net/itm/p/12555559.html
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 500 | V | Maximum voltage between drain and source |
Gate-Source Voltage | VGS | -15 | - | 15 | V | Maximum voltage between gate and source |
Continuous Drain Current | ID | - | 24 | - | A | Continuous current through the drain |
Pulse Drain Current | ID(pulse) | - | 60 | - | A | Peak pulse current through the drain (tpw = 10 渭s) |
Power Dissipation | PTOT | - | - | 300 | W | Maximum total power dissipation |
Junction Temperature | TJ | - | - | 175 | 掳C | Maximum junction temperature |
Storage Temperature | TSTG | -65 | - | 150 | 掳C | Operating temperature range |
Thermal Resistance, Junction to Case | R胃JC | - | 0.45 | - | 掳C/W | Thermal resistance from junction to case |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 500V.
- The gate-source voltage (VGS) should be within 卤15V.
Current Ratings:
- The continuous drain current (ID) should not exceed 24A.
- For pulse conditions, the peak drain current (ID(pulse)) can reach up to 60A for a pulse width of 10 渭s.
Power Dissipation:
- The maximum total power dissipation (PTOT) is 300W. Ensure adequate heat sinking to manage thermal dissipation.
Temperature Considerations:
- The junction temperature (TJ) should not exceed 175掳C.
- The device can operate over a storage temperature range from -65掳C to 150掳C.
Thermal Management:
- The thermal resistance from the junction to the case (R胃JC) is 0.45掳C/W. Proper heat sinking is essential to maintain the junction temperature within safe limits.
Handling and Storage:
- Handle the device with care to avoid damage to the pins and the semiconductor structure.
- Store the device in a dry, cool place to prevent moisture damage.
Mounting:
- Follow the recommended mounting torque for the screws to ensure good thermal contact and mechanical stability.
- Use a thermal interface material (TIM) to enhance heat transfer from the device to the heatsink.
Electrostatic Discharge (ESD) Protection:
- Use appropriate ESD protection measures when handling the device to prevent damage from static electricity.
Circuit Design:
- Ensure that the circuit design includes necessary protective components such as fuses, transient voltage suppressors (TVS), and snubbers to protect the device from overvoltage and overcurrent conditions.
Testing:
- Perform initial testing at reduced voltages and currents to verify the correct operation of the device before operating at full specifications.
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