FDA24N50F

FDA24N50F

Category: Transistors

Specifications
SKU
12555559
Details

BUY FDA24N50F https://www.utsource.net/itm/p/12555559.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS - - 500 V Maximum voltage between drain and source
Gate-Source Voltage VGS -15 - 15 V Maximum voltage between gate and source
Continuous Drain Current ID - 24 - A Continuous current through the drain
Pulse Drain Current ID(pulse) - 60 - A Peak pulse current through the drain (tpw = 10 渭s)
Power Dissipation PTOT - - 300 W Maximum total power dissipation
Junction Temperature TJ - - 175 掳C Maximum junction temperature
Storage Temperature TSTG -65 - 150 掳C Operating temperature range
Thermal Resistance, Junction to Case R胃JC - 0.45 - 掳C/W Thermal resistance from junction to case

Instructions for Use:

  1. Voltage Ratings:

    • Ensure that the drain-source voltage (VDS) does not exceed 500V.
    • The gate-source voltage (VGS) should be within 卤15V.
  2. Current Ratings:

    • The continuous drain current (ID) should not exceed 24A.
    • For pulse conditions, the peak drain current (ID(pulse)) can reach up to 60A for a pulse width of 10 渭s.
  3. Power Dissipation:

    • The maximum total power dissipation (PTOT) is 300W. Ensure adequate heat sinking to manage thermal dissipation.
  4. Temperature Considerations:

    • The junction temperature (TJ) should not exceed 175掳C.
    • The device can operate over a storage temperature range from -65掳C to 150掳C.
  5. Thermal Management:

    • The thermal resistance from the junction to the case (R胃JC) is 0.45掳C/W. Proper heat sinking is essential to maintain the junction temperature within safe limits.
  6. Handling and Storage:

    • Handle the device with care to avoid damage to the pins and the semiconductor structure.
    • Store the device in a dry, cool place to prevent moisture damage.
  7. Mounting:

    • Follow the recommended mounting torque for the screws to ensure good thermal contact and mechanical stability.
    • Use a thermal interface material (TIM) to enhance heat transfer from the device to the heatsink.
  8. Electrostatic Discharge (ESD) Protection:

    • Use appropriate ESD protection measures when handling the device to prevent damage from static electricity.
  9. Circuit Design:

    • Ensure that the circuit design includes necessary protective components such as fuses, transient voltage suppressors (TVS), and snubbers to protect the device from overvoltage and overcurrent conditions.
  10. Testing:

    • Perform initial testing at reduced voltages and currents to verify the correct operation of the device before operating at full specifications.
(For reference only)

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