Details

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BUY 2SC1775 https://www.utsource.net/itm/p/12555756.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	40	V
Emitter-Base Voltage	VEB	-	-	6	V
Collector Current	IC	-	150	-	mA
Base Current	IB	-	10	-	mA
Power Dissipation	PT	-	-	625	mW
DC Current Gain	hFE	30	100	300	-
Transition Frequency	fT	-	300	-	MHz
Storage Temperature	TSTG	-55	-	150	°C
Operating Temperature	TA	-55	-	150	°C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Avoid mechanical stress on the leads.

2. Biasing:

   • Use appropriate base resistors to limit base current and prevent damage.
   • Ensure the base-emitter voltage does not exceed the specified maximum.

3. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage, emitter-base voltage, collector current, and power dissipation.
   • Operate within the recommended temperature range to ensure reliable performance.

4. Handling:

   • Handle with care to avoid static discharge which can damage the transistor.
   • Store in a dry, cool place away from direct sunlight.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor.
   • Check for continuity between the leads to ensure there are no short circuits.

6. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Ideal for use in audio amplifiers, RF circuits, and other high-frequency applications.

(For reference only)