Details

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BUY FSL128MRT https://www.utsource.net/itm/p/12562509.html

Below is the parameter table and instructions for the FSL128MRT, a 128 Mbit (16 MByte) Serial NOR Flash Memory with Quad SPI Interface.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Supply Voltage	VCC	2.7	-	3.6	V	Operating
Standby Current	IDD0	1	5	10	μA	VCC = 3.0V, Standby Mode
Active Current	IDD1	4	8	12	mA	VCC = 3.0V, Read at 104 MHz
Write Enable/Disable Time	tWEL	0	0.1	1	μs	VCC = 3.0V
Page Program Time	tPP	0	2.5	5	ms	VCC = 3.0V, 256 bytes
Sector Erase Time	tSE	0	250	500	ms	VCC = 3.0V, 4 Kbytes
Block Erase Time	tBE	0	2500	5000	ms	VCC = 3.0V, 64 Kbytes
Chip Erase Time	tCE	0	30000	60000	ms	VCC = 3.0V, Full Chip
Data Retention	-	100	-	-	years	VCC = 3.0V, 25°C
Operating Temperature Range	-	-40	-	85	°C	Industrial
Storage Temperature Range	-	-65	-	150	°C

Instructions

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
   • The device should be powered from a stable and regulated power source.

2. Initialization:

   • After applying power, wait for the device to initialize. This typically takes less than 1 μs.
   • Set the device into active mode by sending the appropriate command sequence.

3. Read Operations:

   • Use the Read Data (03h) command to read data from the memory.
   • For faster read operations, use the Fast Read (0Bh) or Dual Output Fast Read (3Bh) commands.

4. Write Operations:

   • Before performing any write operation, ensure the Write Enable Latch (WEL) is set by sending the Write Enable (06h) command.
   • Use the Page Program (02h) command to write up to 256 bytes of data to a single page.
   • After writing, send the Write Disable (04h) command to clear the WEL.

5. Erase Operations:

   • Use the Sector Erase (20h) command to erase a 4 Kbyte sector.
   • Use the Block Erase (52h) command to erase a 64 Kbyte block.
   • Use the Chip Erase (60h) command to erase the entire chip.
   • Wait for the specified erase time before initiating new operations.

6. Status Register:

   • Read the status register using the Read Status Register (05h) command to check the status of write and erase operations.
   • The Write In Progress (WIP) bit (bit 0) indicates whether a write or erase operation is in progress.

7. Quad SPI Operations:

   • For quad SPI operations, use the Quad I/O Read (EBh) command for fast data transfer.
   • Ensure the device is configured for quad SPI mode using the appropriate configuration commands.

8. Temperature Considerations:

   • The device operates reliably within the temperature range of -40°C to 85°C.
   • Store the device within the temperature range of -65°C to 150°C.

9. Data Retention:

   • The device retains data for up to 100 years under normal operating conditions (VCC = 3.0V, 25°C).

10. Handling and Storage:

    • Handle the device with care to avoid electrostatic discharge (ESD).
    • Store the device in a dry and cool environment to prevent damage.

By following these instructions, you can effectively use the FSL128MRT serial NOR flash memory in your applications.

(For reference only)