Details

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BUY NCEP15T14T https://www.utsource.net/itm/p/12591006.html

Parameter	Description	Value
Part Number	Component Identifier	NCEP15T14T
Type	Component Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package	Housing Type	TO-220
VDS (Max)	Drain-to-Source Voltage	150V
VGS (Max)	Gate-to-Source Voltage	±20V
ID (Max)	Continuous Drain Current	14A
PD (Max)	Power Dissipation	100W
RDS(on) (Max)	On-State Resistance at VGS = 10V	0.035Ω
fT	Transition Frequency	3MHz
Qg	Total Gate Charge	60nC
Vth (Min/Max)	Threshold Voltage	2V / 4V
TJ (Max)	Junction Temperature	150°C
Storage Temperature Range	Operating Temperature for Storage	-65°C to 150°C

Instructions:

1. Handling:

   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.
   • Avoid touching the leads or the body of the component directly.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Follow the recommended soldering profile to avoid damage from excessive heat.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the specified temperature range to ensure reliable performance.

4. Testing:

   • Use a compatible tester with the correct settings for MOSFETs.
   • Test the component in a controlled environment to prevent damage from overvoltage or overcurrent.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep the components in their original packaging until ready for use to protect against static discharge.

(For reference only)