Details

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BUY 2N2907 https://www.utsource.net/itm/p/12591025.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	60	V
Collector-Base Voltage	VCBO	-	-	75	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	150	mA
Base Current	IB	-	-	15	mA
Power Dissipation	PTOT	-	-	625	mW
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C
Transition Frequency	fT	-	300	-	MHz
DC Current Gain	hFE	10	70	300	-
AC Current Gain	hfe	-	70	300	-

Instructions for Using 2N2907 Transistor

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified range.
   • Handle with care to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking if the transistor will be operating near its maximum power dissipation.
   • Use appropriate mounting hardware to secure the transistor without causing mechanical stress.

3. Biasing:

   • Set the base current (I_B) to ensure the transistor operates within its safe operating area.
   • For typical applications, use the typical values of h_FE for biasing calculations.

4. Circuit Design:

   • Ensure that the collector-emitter voltage (V_CEO) does not exceed 60V to avoid breakdown.
   • Keep the collector current (I_C) below 150mA to prevent overheating and damage.

5. Testing:

   • Test the transistor using a multimeter or a transistor tester to verify its functionality.
   • Check for correct pinout: E (Emitter), B (Base), C (Collector).

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep in anti-static packaging to protect against electrostatic discharge (ESD).

7. Applications:

   • Suitable for general-purpose switching and amplification circuits.
   • Commonly used in audio amplifiers, power supplies, and digital logic circuits.

(For reference only)