Details

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BUY 2N6851 https://www.utsource.net/itm/p/12591026.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	100	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	15	-	A
Base Current	IB	-	1.5	-	A
Power Dissipation	PT	-	130	-	W
Junction Temperature	TJ	-	150	-	°C
Storage Temperature	TSTG	-55	-	150	°C
Thermal Resistance	RθJC	-	1.1	-	°C/W

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use appropriate heat sinks to manage thermal resistance and ensure the junction temperature does not exceed 150°C.

2. Mounting:

   • Ensure proper mechanical mounting to avoid stress on the leads.
   • Use a flat surface and secure the transistor with a screw or clip if necessary.

3. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) according to the circuit diagram.
   • Ensure all connections are secure and free from shorts.

4. Biasing:

   • Set the base current (I_B) to achieve the desired collector current (I_C).
   • Use a suitable biasing network to maintain stable operation.

5. Testing:

   • Test the transistor in a controlled environment to verify its performance.
   • Use a multimeter or oscilloscope to measure voltage and current levels.

6. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight.
   • Keep the leads free from corrosion and damage.

7. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use protective equipment such as gloves and goggles when handling the transistor.

(For reference only)