ILX508A

ILX508A


Specifications
Details

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Parameter Description Specifications
Part Number ILX508A
Type Photo Diode
Material Silicon
Spectral Range Wavelength Sensitivity 400 nm to 1100 nm
Peak Sensitivity Peak Response Wavelength 950 nm
Reverse Voltage Maximum Reverse Voltage 15 V
Dark Current Dark Current at 25°C, VR = 15V 1 nA
Response Time Rise/Fall Time 5 μs (Typical)
Capacitance Junction Capacitance 30 pF (at 0V)
Operating Temp. Operating Temperature Range -40°C to +85°C
Storage Temp. Storage Temperature Range -55°C to +150°C
Package Package Type TO-46 Metal Can

Instructions for Use:

  1. Handling: Handle with care to avoid damage. Use appropriate ESD protection.
  2. Mounting: Ensure proper alignment during mounting to maximize light reception.
  3. Biasing: Apply reverse bias voltage within the specified range to prevent damage.
  4. Temperature Considerations: Operate within the specified temperature range to ensure reliable performance.
  5. Cleaning: Clean only with recommended solvents; avoid harsh chemicals that can damage the package or lens.
  6. Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.
(For reference only)

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