Details
BUY 4151CP https://www.utsource.net/itm/p/12591064.html
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | Component Identifier | 4151CP | - |
| Type | Device Type | Bipolar Transistor | - |
| Collector-Emitter Voltage (VCEO) | Maximum voltage between collector and emitter | 80 | V |
| Collector-Base Voltage (VCBO) | Maximum voltage between collector and base | 80 | V |
| Emitter-Base Voltage (VEBO) | Maximum voltage between emitter and base | 5 | V |
| Continuous Collector Current (IC) | Maximum continuous collector current | 1.5 | A |
| Power Dissipation (PD) | Maximum power dissipation | 65 | W |
| Transition Frequency (fT) | Frequency at which gain is unity | 300 | MHz |
| Storage Temperature Range (TSTG) | Operating temperature range for storage | -55 to +150 | °C |
| Junction Temperature (TJ) | Maximum operating junction temperature | 150 | °C |
Instructions for Use:
- Handling: The 4151CP is sensitive to electrostatic discharge (ESD). Use proper ESD precautions when handling.
- Mounting: Ensure adequate heat sinking if operating near maximum power dissipation limits.
- Biasing: Carefully set biasing conditions to avoid exceeding the maximum ratings, especially for VCEO, VCBO, and VEBO.
- Operation: Operate within specified temperature ranges to ensure reliability and performance.
- Testing: During testing, do not exceed the maximum ratings specified in the table to prevent damage to the device.
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