Details

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BUY IXF1104CE.B0 https://www.utsource.net/itm/p/12591194.html

Parameter	Description	Value	Unit
Part Number	Full part identifier	IXF1104CE.B0	-
Type	Device type	IGBT	-
Voltage Rating (Vces)	Collector-Emitter Breakdown Voltage	1200	V
Current Rating (Ic)	Continuous Collector Current	104	A
Power Dissipation	Maximum Power Dissipation	200	W
Operating Temperature (Tj)	Junction Temperature Range	-50 to 175	°C
Switching Frequency	Typical Operating Frequency	20	kHz
Package Type	Encapsulation and pin configuration	TO-247-3	-
Storage Temperature	Recommended Storage Temperature Range	-55 to 150	°C

Instructions for Use:

1. Installation:

   • Ensure the mounting surface is clean and flat.
   • Apply a thin, even layer of thermal compound on the heatsink before attaching the device.
   • Torque the mounting screw to the manufacturer’s recommended specification.

2. Electrical Connections:

   • Connect the collector terminal to the high voltage side of the circuit.
   • Connect the emitter terminal to the low voltage or ground side.
   • The gate terminal should be connected to the driver circuit.

3. Heatsinking:

   • Proper heatsinking is critical for maintaining junction temperature within specified limits.
   • Calculate the required heatsink based on power dissipation and ambient temperature.

4. Handling Precautions:

   • Handle with care to avoid damage to the pins and body.
   • Use anti-static precautions to prevent damage from ESD (Electrostatic Discharge).

5. Testing:

   • Before installing into final applications, test the device in a controlled environment to ensure it meets performance specifications.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive materials.

(For reference only)