2SC5006-T1-A

2SC5006-T1-A


Specifications
Details

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Parameter Value Unit
Type NPN Silicon Transistor -
Collector-Emitter Voltage (VCEO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.5 A
Power Dissipation (PD) 625 mW
Transition Frequency (fT) 300 MHz
Operating Temperature Range -55 to 150 °C
Package Type TO-92 -

Instructions for Use:

  1. Handling: Handle the 2SC5006-T1-A with care to avoid damage to its leads and body. Use appropriate anti-static measures to prevent damage from electrostatic discharge (ESD).

  2. Mounting: Ensure that the mounting orientation is correct according to the pin configuration. The TO-92 package has a flat side which typically indicates the emitter lead.

  3. Soldering: Apply heat only to the leads during soldering, not directly to the body of the transistor. Keep soldering time as short as possible to avoid overheating.

  4. Electrical Connections: Connect the collector, base, and emitter leads correctly to your circuit. Refer to the datasheet for specific pinouts if necessary.

  5. Thermal Considerations: Given the power dissipation limit, ensure adequate heat sinking or cooling if operating near maximum ratings.

  6. Storage: Store in a cool, dry place away from direct sunlight and sources of heat. Keep in original packaging until ready for use to protect against static.

  7. Testing: Before integrating into a final design, test the transistor under controlled conditions to verify its performance meets specifications.

(For reference only)

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