Details
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| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Supply Voltage | VDD | Operating | 2.7 | 3.6 | V | |
| Standby Current | ISB | VDD = 3.0V | 1 | μA | ||
| Active Current | IOP | VDD = 3.0V | 5 | mA | ||
| Data Retention Current | IR | VDD = 3.0V | 0.1 | μA | ||
| Access Time | tACC | 70 | ns | |||
| Page Program Time | tPP | 2 | ms | |||
| Block Erase Time | tBE | 15 | ms | |||
| Chip Enable Setup Time | tCES | 10 | ns | |||
| Chip Enable Hold Time | tCEH | 10 | ns | |||
| Output High Level | VOH | VDD = 3.0V, IIH=0.4mA | 2.4 | V | ||
| Output Low Level | VOL | VDD = 3.0V, IIL=-0.4mA | 0.4 | V |
Instructions for M5M5178AFP:
Power Supply Requirements:
- Ensure the supply voltage (VDD) is within the range of 2.7V to 3.6V for proper operation.
Current Consumption:
- Monitor standby and active current to optimize power consumption in your application. The device consumes approximately 1μA in standby mode and 5mA in active mode at a supply voltage of 3.0V.
Timing Parameters:
- Adhere to the specified access time (tACC) of 70ns for reliable data read operations.
- For programming operations, ensure the page program time (tPP) does not exceed 2ms.
- During block erase, allow up to 15ms as per the block erase time (tBE).
Signal Timing:
- Observe chip enable setup time (tCES) and hold time (tCEH), both set to 10ns, to maintain signal integrity during transitions.
Output Levels:
- Verify that the output levels are within the specified ranges for high (VOH ≥ 2.4V) and low (VOL ≤ 0.4V) states when operating at VDD = 3.0V.
Handling and Storage:
- Handle the component with care to avoid electrostatic discharge (ESD) damage. Store in recommended conditions to prevent degradation.
Programming and Erasing:
- Follow the manufacturer’s guidelines for programming and erasing procedures to ensure data integrity and reliability.
For detailed specifications and advanced usage, refer to the official datasheet provided by the manufacturer.
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