M5M5178AFP

M5M5178AFP


Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VDD Operating 2.7 3.6 V
Standby Current ISB VDD = 3.0V 1 μA
Active Current IOP VDD = 3.0V 5 mA
Data Retention Current IR VDD = 3.0V 0.1 μA
Access Time tACC 70 ns
Page Program Time tPP 2 ms
Block Erase Time tBE 15 ms
Chip Enable Setup Time tCES 10 ns
Chip Enable Hold Time tCEH 10 ns
Output High Level VOH VDD = 3.0V, IIH=0.4mA 2.4 V
Output Low Level VOL VDD = 3.0V, IIL=-0.4mA 0.4 V

Instructions for M5M5178AFP:

  1. Power Supply Requirements:

    • Ensure the supply voltage (VDD) is within the range of 2.7V to 3.6V for proper operation.
  2. Current Consumption:

    • Monitor standby and active current to optimize power consumption in your application. The device consumes approximately 1μA in standby mode and 5mA in active mode at a supply voltage of 3.0V.
  3. Timing Parameters:

    • Adhere to the specified access time (tACC) of 70ns for reliable data read operations.
    • For programming operations, ensure the page program time (tPP) does not exceed 2ms.
    • During block erase, allow up to 15ms as per the block erase time (tBE).
  4. Signal Timing:

    • Observe chip enable setup time (tCES) and hold time (tCEH), both set to 10ns, to maintain signal integrity during transitions.
  5. Output Levels:

    • Verify that the output levels are within the specified ranges for high (VOH ≥ 2.4V) and low (VOL ≤ 0.4V) states when operating at VDD = 3.0V.
  6. Handling and Storage:

    • Handle the component with care to avoid electrostatic discharge (ESD) damage. Store in recommended conditions to prevent degradation.
  7. Programming and Erasing:

    • Follow the manufacturer’s guidelines for programming and erasing procedures to ensure data integrity and reliability.

For detailed specifications and advanced usage, refer to the official datasheet provided by the manufacturer.

(For reference only)

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