Details

---

BUY 2SK2915 https://www.utsource.net/itm/p/12591330.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	Vds	-	-	300	V	-
Gate-Source Voltage	Vgs	-15	-	10	V	-
Continuous Drain Current	Id	-	15	-	A	Tc = 25°C
Pulsed Drain Current	Ipd	-	30	-	A	t = 10 μs, Duty = 1%
Power Dissipation	Pd	-	-	240	W	Tc = 25°C
Junction Temperature	Tj	-	-	175	°C	-
Storage Temperature	Tstg	-55	-	150	°C	-
Thermal Resistance	Rth	-	0.8	-	°C/W	Case to Ambient

Instructions for Use:

1. Mounting and Heat Sinking:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use thermal compound between the device and heat sink for better thermal conductivity.

2. Biasing:

   • Apply gate-source voltage (Vgs) within the range of -15V to +10V to control the drain current.
   • Avoid exceeding the maximum gate-source voltage to prevent damage to the device.

3. Current Handling:

   • Do not exceed the continuous drain current (Id) of 15A at 25°C case temperature.
   • For pulsed applications, ensure the pulse duration and duty cycle do not exceed 10 μs and 1%, respectively.

4. Power Dissipation:

   • Keep the power dissipation (Pd) below 240W to avoid overheating.
   • Monitor the junction temperature (Tj) to ensure it does not exceed 175°C.

5. Storage and Handling:

   • Store the device in a dry, cool environment within the storage temperature range of -55°C to 150°C.
   • Handle with care to avoid mechanical stress or damage to the leads.

6. Electrostatic Discharge (ESD) Protection:

   • Use ESD protection measures when handling the device to prevent damage from static electricity.

7. Testing:

   • Use appropriate test equipment and procedures to avoid exceeding the maximum ratings during testing.

8. Circuit Design:

   • Design circuits to ensure that all operating conditions remain within the specified parameters.
   • Consider the effects of ambient temperature and cooling on the device performance.

(For reference only)