Details

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BUY SPD35N10 https://www.utsource.net/itm/p/12591417.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 3.5A	-	0.024	-	Ω
Gate-Source Voltage	VGS(th)	ID = 250μA	1.0	1.5	2.0	V
Continuous Drain Current	ID	Tc = 25°C	-	-	3.5	A
Pulse Drain Current	Ipp	tp = 10ms, Tc = 25°C	-	-	12	A
Gate Charge	Qg	VGS = 10V	-	16	-	nC
Input Capacitance	Ciss	VDS = 10V	-	1270	-	pF
Output Capacitance	Coss	VDS = 10V	-	180	-	pF
Total Power Dissipation	PD	Ta = 25°C	-	-	0.9	W
Junction Temperature	TJ	-	-	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Handle the SPD35N10 with care to avoid damage to the leads and body.
   • Ensure that the device is mounted on a suitable heatsink if operating at high power levels.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly as per the circuit design.
   • Apply appropriate gate-source voltage (VGS) to control the switching of the device.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Operate within the recommended temperature range to ensure reliable performance.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.

5. Safety Precautions:

   • Avoid exposing the device to excessive voltage or current spikes which can lead to premature failure.
   • Follow proper grounding and isolation practices when working with circuits involving this device.

6. Testing:

   • Before installing into a final application, test the device under controlled conditions to verify functionality.

(For reference only)