Details

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BUY 2SD665A https://www.utsource.net/itm/p/12591446.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	80	V	IC = -5mA, IB = 0
Emitter-Base Voltage	V(BR)EBO	-	-	5	V	IE = -150mA
Collector-Base Voltage	V(BR)CBO	-	-	80	V	IC = -5mA, IE = 0
Collector Current	IC	-	-	1.5	A	VCE = 2V
Continuous Collector Current	ICM	-	-	1.5	A	Tc = 25°C
Power Dissipation	Ptot	-	-	62.5	mW	Tc = 25°C
Forward Current Transfer Ratio	hFE	40	150	400	-	IC = 50mA, VCE = 5V
Storage Temperature Range	Tstg	-55	-	150	°C
Operating Temperature Range	Topr	-55	-	150	°C

Instructions for Use:

1. Mounting: Ensure the transistor is mounted with adequate heat dissipation if used near its maximum power dissipation limits.
2. Biasing: Carefully set biasing conditions to avoid exceeding the maximum ratings for collector-emitter voltage and collector current.
3. Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use proper anti-static precautions.
4. Testing: When testing or measuring parameters, ensure that the test conditions match those specified in the table to obtain accurate results.
5. Storage: Store in a dry, cool place within the storage temperature range to maintain reliability.
6. Application: Suitable for general-purpose switching and amplification applications where high gain and moderate power handling are required.

(For reference only)