Details

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BUY BSM75GB120DLC https://www.utsource.net/itm/p/12591464.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)DSS	-	1200	-	V	Drain-Source Breakdown Voltage
Continuous Drain Current	ID	-	-	75	A	Continuous Drain Current at Tc=25°C
Power Dissipation	Ptot	-	-	350	W	Total Power Dissipation
Junction Temperature	TJ	-25	-	175	°C	Operating Junction Temperature Range
Gate Charge	Qg	-	84	-	nC	Total Gate Charge
Input Capacitance	Ciss	-	6200	-	pF	Input Capacitance
Output Capacitance	Coss	-	1600	-	pF	Output Capacitance
Reverse Transfer Capacitance	Crss	-	1350	-	pF	Reverse Transfer Capacitance
RDS(on) @ ID = 25A, VGS = 15V	RDS(on)	-	0.075	-	Ω	On-State Resistance

Instructions for Use:

1. Handling Precautions: The BSM75GB120DLC is sensitive to ESD (Electrostatic Discharge). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper thermal management by mounting the device on a suitable heatsink to maintain junction temperature within specified limits.
3. Voltage Rating: Do not exceed the maximum blocking voltage (V(BR)DSS) of 1200V to prevent device failure.
4. Current Handling: Operate within the continuous drain current (ID) limit of 75A to avoid overheating and potential damage.
5. Gate Drive Requirements: Ensure the gate drive circuit can supply sufficient charge (Qg) as specified to switch the MOSFET efficiently.
6. Capacitance Considerations: Account for the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in your circuit design, especially for high-frequency applications.
7. Power Dissipation: Keep the total power dissipation (Ptot) below 350W to ensure reliable operation. Proper cooling methods may be necessary for higher power applications.
8. Operating Temperature: Maintain the junction temperature (TJ) between -25°C and 175°C to ensure stable performance and longevity of the device.

(For reference only)