Details

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BUY CY7C1049B-20VIT https://www.utsource.net/itm/p/12591905.html

Parameter	Description	Value
Device	High-Speed CMOS Static RAM	CY7C1049B-20VIT
Organization	Organization of Memory	8K x 8
Supply Voltage (Vcc)	Operating Supply Voltage	5.0 V
Access Time	Access Time from Address Stable to Data Valid	20 ns
Output Drive Capability	Output Drive Strength	16 mA Source/Sink per Output
Power Dissipation	Maximum Power Consumption	320 mW (Typical at 10 MHz)
Operating Temperature	Industrial Temperature Range	-40掳C to +85掳C
Package Type	Type of Package	28-Pin Plastic DIP or SOIC
Data Retention	Data Retention Time	20 years
Standby Current	Current in Standby Mode	20 渭A

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified range (5.0V). Avoid exceeding this to prevent damage.
2. Address Inputs: Apply address inputs before the rising edge of the Write Enable (WE#) signal for write operations.
3. Write Operations: Set the Write Enable (WE#) low to perform a write operation. Ensure data is stable before WE# goes low.
4. Read Operations: Set WE# high and provide the address. Data will be valid after the specified access time.
5. Data Outputs: Outputs are three-state controlled by the Output Enable (OE#) pin. Set OE# low to enable outputs.
6. Temperature Considerations: Operate within the industrial temperature range (-40掳C to +85掳C) to ensure reliable performance.
7. Handling: Handle with care to avoid static discharge; use appropriate ESD precautions.
8. Storage: Store in a dry environment to prevent moisture damage.

For detailed specifications and advanced usage, refer to the official datasheet provided by Cypress Semiconductor.

(For reference only)