Details

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BUY ZTX857 https://www.utsource.net/itm/p/12591906.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	450	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	-	1500	mA
Base Current	IB	-	-	150	mA
Power Dissipation	PT	-	-	62.5	W	TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
DC Current Gain (hFE)	hFE	30	100	300	-	IC = 100mA, VCE = 10V
Transition Frequency	fT	-	10	-	MHz

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid mechanical damage.
   • Use appropriate heat sinks to manage thermal dissipation, especially when operating at high power levels.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
   • Use suitable wire gauges to handle the current ratings specified.

3. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage, base-emitter voltage, collector current, and power dissipation.
   • Ensure that the junction temperature does not exceed 150掳C to prevent thermal runaway.

4. Storage:

   • Store the device in a dry environment within the storage temperature range of -65掳C to 150掳C.
   • Avoid exposure to corrosive environments or excessive humidity.

5. Testing:

   • When testing the device, use a low current initially to verify connections and operation.
   • Measure the DC current gain (h_FE) to ensure it falls within the specified range.

6. Safety:

   • Always follow proper safety guidelines when working with high voltages and currents.
   • Use appropriate personal protective equipment (PPE) as necessary.

(For reference only)