Details

---

BUY 2SA1020 https://www.utsource.net/itm/p/12591913.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 0, T = 25°C
Emitter-Collector Voltage	VECC	-	-	60	V	IC = 0, T = 25°C
Base-Emitter Voltage	VBE	-	-	7	V	IC = 150mA, T = 25°C
Base-Collector Voltage	VBCE	-	-	60	V	IC = 0, T = 25°C
Collector Current	IC	-	150	300	mA	VCE = 5V, VBE = 2.5V, T = 25°C
Base Current	IB	-	15	30	mA	VBE = 2.5V, T = 25°C
Power Dissipation	PT	-	-	625	mW	TA = 25°C
Operating Temperature	TOP	-40	-	150	°C	-
Storage Temperature	TSTG	-55	-	150	°C	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat dissipation if the transistor is used at high power levels.
   • Use a heat sink if the power dissipation exceeds the safe operating range.

2. Biasing:

   • Apply the base current (I_B) carefully to avoid exceeding the maximum collector current (I_C).
   • Ensure that the base-emitter voltage (V_BE) does not exceed the maximum rating.

3. Operating Conditions:

   • Operate the transistor within the specified temperature range to avoid thermal damage.
   • Do not exceed the maximum collector-emitter voltage (V_CEO) or base-collector voltage (V_BCE).

4. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Avoid exposure to extreme temperatures outside the storage temperature range.

5. Handling:

   • Handle the transistor with care to avoid mechanical stress.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

(For reference only)