Details

---

BUY 2SA673C https://www.utsource.net/itm/p/12592193.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	45	V
Emitter-Collector Voltage	VECE	-	-	45	V
Base-Emitter Voltage	VBE	-	2.0	3.0	V
Collector Current	IC	-	-	1.5	A
Base Current	IB	-	-	0.15	A
Power Dissipation	PD	-	-	625	mW
Storage Temperature	Tstg	-55	-	150	掳C
Operating Temperature	Topr	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to temperatures outside the specified operating range.
   • Handle the device with care to prevent mechanical damage.

2. Mounting:

   • Ensure proper heat sinking if the device is expected to dissipate significant power.
   • Use appropriate mounting techniques to avoid thermal stress.

3. Biasing:

   • Ensure that the base-emitter voltage (VBE) does not exceed the maximum rating.
   • The collector current (IC) should not exceed the maximum value to prevent damage.

4. Testing:

   • When testing the device, use a suitable test circuit to avoid overloading the transistor.
   • Measure parameters under conditions that do not exceed the maximum ratings.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device away from direct sunlight and sources of high temperature.

6. Soldering:

   • Use a controlled soldering process to avoid overheating the device.
   • Allow the device to cool down to room temperature before operation.

7. Electrostatic Discharge (ESD) Protection:

   • Handle the device with ESD-protected tools and equipment.
   • Ground yourself before touching the device to prevent static discharge.

8. Circuit Design:

   • Ensure that the circuit design accounts for the maximum ratings and typical operating conditions.
   • Use appropriate decoupling capacitors to stabilize the power supply and reduce noise.

(For reference only)