Details

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BUY NGTB25N120FL3WG https://www.utsource.net/itm/p/12593278.html

Parameter	Description	Value	Unit
Device Type	N-channel MOSFET	-	-
Package	D2PAK (TO-263)	-	-
Drain-Source Voltage	Maximum drain-source voltage	1200	V
Continuous Drain Current	Continuous drain current at Tc = 25掳C	25	A
Pulse Drain Current	Pulse drain current (t = 10 渭s, Duty cycle = 1%)	78	A
Gate-Source Voltage	Maximum gate-source voltage	卤20	V
Total Power Dissipation	Total power dissipation (Tc = 25掳C)	204	W
Junction Temperature	Operating junction temperature range	-55 to +175	掳C
Thermal Resistance	Junction-to-case thermal resistance	0.5	掳C/W
Input Capacitance	Input capacitance at VGS = 0 V, VDS = 10 V	2900	pF
Output Capacitance	Output capacitance at VGS = 0 V, VDS = 10 V	125	pF
Reverse Transfer Capacitance	Reverse transfer capacitance at VGS = 0 V, VDS = 10 V	115	pF
RDS(on)	On-state resistance at VGS = 10 V, ID = 10 A	0.076	惟

Instructions for Use:

1. Handling Precautions:

   • Ensure proper ESD protection when handling the device.
   • Avoid exceeding the maximum ratings listed in the parameter table.

2. Mounting:

   • Follow recommended PCB layout guidelines for optimal thermal performance.
   • Ensure good heat sinking to maintain junction temperature within limits.

3. Biasing and Operation:

   • Apply gate-source voltage within specified limits to avoid damage.
   • Monitor drain current to prevent exceeding continuous or pulse current ratings.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to prevent physical damage.

5. Testing:

   • Use appropriate test equipment and methods to verify device parameters.
   • Refer to datasheet for detailed testing procedures and conditions.

(For reference only)