Details

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BUY NTB5426N https://www.utsource.net/itm/p/12593279.html

Parameter	Description	Value
Part Number	Component Identifier	NTB5426N
Type	Device Type	N-Channel Enhancement Mode MOSFET
VDS (Max)	Drain-to-Source Voltage	60V
VGS (Max)	Gate-to-Source Voltage	卤20V
ID (Max)	Continuous Drain Current	1.8A at 25掳C
RDS(on)	On-State Resistance	0.17惟 at VGS=10V
PD (Max)	Power Dissipation	0.36W
TJ (Max)	Junction Temperature	150掳C
SOA	Safe Operating Area	Refer to datasheet
Package	Encapsulation Type	SOT-23
Mounting Style	Surface Mount	Yes
Lead Finish	Terminal Plating	Matte Tin

Instructions for Use:

1. Handling Precautions:

   • The NTB5426N is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.

2. Installation:

   • Ensure that the device is soldered onto a PCB with adequate thermal management, especially if operating near maximum power dissipation.

3. Operating Conditions:

   • Operate within specified voltage and current limits to avoid damage.
   • Ensure gate voltages do not exceed 卤20V to prevent gate oxide breakdown.

4. Thermal Considerations:

   • Monitor junction temperature to ensure it does not exceed 150掳C.
   • Use heat sinks or other cooling methods if necessary.

5. Safe Operating Area (SOA):

   • Review the SOA graph in the datasheet to ensure safe operation under all conditions.

6. Storage:

   • Store in original packaging in a dry environment until ready for use.

Refer to the full datasheet for more detailed specifications and application notes.

(For reference only)