Details

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BUY MX29F002BQC-70 https://www.utsource.net/itm/p/12593422.html

Parameter Name	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VCC	2.7	-	3.6	V	Operating voltage range
Standby Current	ICC	-	1	5	μA	Current consumption in standby mode
Active Current	ICC	-	20	30	mA	Current consumption during active operation
Access Time	tACC	-	70	-	ns	Time from address valid to data valid
Page Program Time	tPP	-	300	400	μs	Time required to program one page
Block Erase Time	tBE	-	200	300	ms	Time required to erase one block
Chip Enable Setup Time	tCES	-	10	20	ns	Time before CE# is asserted that address and control signals must be stable
Chip Enable Hold Time	tCEH	-	10	20	ns	Time after CE# is deasserted that address and control signals must be stable
Output Enable Setup Time	tOES	-	10	20	ns	Time before OE# is asserted that address and control signals must be stable
Output Enable Hold Time	tOEH	-	10	20	ns	Time after OE# is deasserted that address and control signals must be stable
Write Enable Setup Time	tWES	-	10	20	ns	Time before WE# is asserted that address and control signals must be stable
Write Enable Hold Time	tWEH	-	10	20	ns	Time after WE# is deasserted that address and control signals must be stable

Instructions for Using MX29F002BQC-70

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Pin Configuration:

   • Chip Enable (CE#): Low to enable the device, high to disable.
   • Output Enable (OE#): Low to enable data output, high to disable.
   • Write Enable (WE#): Low to initiate write operations, high to hold.
   • Address Lines (A0-A17): Provide the memory address.
   • Data Lines (D0-D7): Bidirectional data lines for read/write operations.

3. Read Operation:

   • Set CE# low to enable the device.
   • Set OE# low to enable data output.
   • Apply the desired address to the address lines.
   • Data will be available on the data lines after the access time (tACC).

4. Write Operation:

   • Set CE# low to enable the device.
   • Set WE# low to initiate a write operation.
   • Apply the desired address to the address lines.
   • Apply the data to be written to the data lines.
   • Ensure all setup and hold times are met before and after asserting WE#.

5. Erase Operation:

   • Set CE# low to enable the device.
   • Issue the appropriate command sequence to start the block erase operation.
   • Wait for the block erase time (tBE) before performing any other operations.

6. Standby Mode:

   • Set CE# high to place the device in standby mode, reducing power consumption.

7. Timing Considerations:

   • Ensure all timing parameters (setup and hold times) are adhered to for reliable operation.
   • Use appropriate decoupling capacitors near the power pins to minimize noise and ensure stable operation.

8. Handling Precautions:

   • Handle the device with care to avoid static discharge, which can damage the chip.
   • Store and transport the device in anti-static packaging.

By following these instructions and adhering to the specified parameters, you can ensure optimal performance and reliability of the MX29F002BQC-70 flash memory device.

(For reference only)