Details

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BUY 2SA844-C https://www.utsource.net/itm/p/12593436.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	60	V
Collector-Base Voltage	VCB	-	-	60	V
Emitter-Base Voltage	VEB	-	-	5	V
Collector Current	IC	-	1.5	3	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PT	-	-	65	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	300	-	MHz

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to secure the transistor.

2. Biasing:

   • Apply base current (I_B) to control collector current (I_C).
   • Ensure that the base-emitter voltage (V_EB) does not exceed the maximum rating.

3. Power Dissipation:

   • Calculate power dissipation (P_T) as V_CE * I_C.
   • Ensure that the power dissipation does not exceed the maximum rating by using adequate heat sinking.

4. Operating Conditions:

   • Operate within the specified temperature range to avoid damage.
   • Store the device in a dry, cool place to prevent degradation.

5. Handling:

   • Handle with care to avoid mechanical stress on the leads.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

6. Testing:

   • Use a suitable multimeter or transistor tester to verify the functionality of the transistor.
   • Test under controlled conditions to ensure accurate results.

7. Soldering:

   • Use a temperature-controlled soldering iron to avoid overheating the device.
   • Solder quickly to minimize thermal stress on the transistor.

8. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Can be used in audio amplifiers, power supplies, and other electronic circuits requiring high current and voltage handling.

(For reference only)