Details

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BUY RD01MUS2-T113 https://www.utsource.net/itm/p/12593492.html

Parameter	Description	Value
Part Number	Full part identifier	RD01MUS2-T113
Type	Device type	MOSFET
Package	Encapsulation type	TO-252 (DPAK)
Drain Source Voltage (Vds)	Maximum voltage between drain and source	60V
Continuous Drain Current (Id)	Maximum continuous current through the drain	4.2A @ 25掳C, 2.8A @ 70掳C
Gate Source Voltage (Vgs)	Maximum voltage between gate and source	卤20V
Rds(on)	On-state resistance at specified conditions	0.09惟 @ Vgs = 10V
Power Dissipation	Maximum power dissipation	2.1W
Operating Temperature Range	Temperature range for operation	-55掳C to +150掳C

Instructions:

1. Handling Precautions: Handle with care to avoid damage to the leads and body. Avoid exposure to high temperatures and humidity.
2. Mounting: Ensure proper mounting to maintain thermal performance. Use recommended PCB layout guidelines for optimal heat dissipation.
3. Electrical Connections: Connect the device ensuring correct polarity and adequate insulation. Verify all connections before applying power.
4. Testing: Perform initial testing under controlled conditions to ensure the device operates within specified parameters.
5. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.

(For reference only)