Details

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BUY MBM29F400BC-90PF https://www.utsource.net/itm/p/12593495.html

Below is the parameter table and instructions for the MBM29F400BC-90PF:

MBM29F400BC-90PF Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Supply Voltage	Vcc	2.7	-	3.6	V	-
Operating Temperature	Ta	-40	-	85	掳C	-
Storage Temperature	Tstg	-65	-	150	掳C	-
Data Retention Time	Tr	-	10	-	Years	@ 85掳C
Write Cycle Endurance	Nw	-	100,000	-	Cycles	Sector Erase
Read Current (High Level)	Ioh	4	-	10	mA	Vcc = 3.6V, Vo = 2.4V
Read Current (Low Level)	Iol	4	-	10	mA	Vcc = 2.7V, Vo = 0.4V
Standby Current	Isb	0.1	-	1	渭A	Vcc = 3.6V, All pins Hi-Z
Write/Program Time	tPROG	-	3	5	ms	Sector Erase
Page Program Time	tPP	-	0.5	1	ms	Page Write
Sector Erase Time	tSE	-	3	5	ms	Sector Erase
Chip Enable Setup Time	tCES	0	-	20	ns	Before rising edge of WE#
Chip Enable Hold Time	tCEH	0	-	20	ns	After falling edge of WE#
Write Enable Setup Time	tWES	0	-	20	ns	Before rising edge of WE#
Write Enable Hold Time	tWEH	0	-	20	ns	After falling edge of WE#
Output High Level	VOH	2.4	-	Vcc-0.4	V	Ioh = 4mA
Output Low Level	VOL	0	-	0.4	V	Iol = 4mA

Instructions for MBM29F400BC-90PF

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • Do not exceed the maximum operating temperature of 85掳C.

2. Pin Configuration:

   • Vcc: Power supply input.
   • GND: Ground.
   • A0-A17: Address lines.
   • DQ0-DQ7: Data I/O lines.
   • CE#: Chip enable (active low).
   • OE#: Output enable (active low).
   • WE#: Write enable (active low).
   • WP#: Write protect (active low).

3. Operation Modes:

   • Read Operation:
     • Set CE# and OE# low.
     • Apply the desired address to A0-A17.
     • Data will be available on DQ0-DQ7 after the access time.
   • Write Operation:
     • Set CE# and WE# low.
     • Apply the desired address to A0-A17.
     • Apply the data to be written to DQ0-DQ7.
     • Data will be written after the write cycle time.
   • Erase Operation:
     • Set CE# and WE# low.
     • Apply the sector address to A0-A17.
     • The sector will be erased after the erase cycle time.

4. Write Protect:

   • Setting WP# high will prevent any write or erase operations.
   • Setting WP# low will allow write and erase operations.

5. Data Retention:

   • The device guarantees data retention for at least 10 years at 85掳C.

6. Endurance:

   • The device can withstand up to 100,000 write cycles per sector.

7. Timing Considerations:

   • Ensure that all setup and hold times are met to avoid data corruption.
   • Refer to the timing parameters in the table for specific values.

8. Storage:

   • Store the device in a dry environment between -65掳C and 150掳C to maintain reliability.

By following these instructions and parameters, you can ensure reliable operation of the MBM29F400BC-90PF flash memory.

(For reference only)