Details

---

BUY INTERNATIONAL RECTIFIER/IR IR2156STRPBF https://www.utsource.net/itm/p/12593599.html

Parameter	Symbol	Conditions	Min	Typical	Max	Unit
Supply Voltage	VCC	-	10	-	20	V
Bootstrap Capacitor Voltage	VBOOT	-	10	-	20	V
Input High-Level Voltage	VIH	-	2.0	-	20	V
Input Low-Level Voltage	VIL	-	-	-	0.8	V
Output High-Level Voltage (Source)	VOH	IOUT = 1 mA	-	13.5	-	V
Output Low-Level Voltage (Sink)	VOL	IOUT = 10 mA	-	0.4	-	V
Propagation Delay Time (High-to-Low)	tdHL	VCC = 15 V, VBOOT = 15 V, RL = 1 k惟	-	70	-	ns
Propagation Delay Time (Low-to-High)	tdLH	VCC = 15 V, VBOOT = 15 V, RL = 1 k惟	-	70	-	ns
Dead-Time Insertion	tdead	VCC = 15 V, VBOOT = 15 V	-	1.0	-	渭s
Maximum Operating Junction Temperature	TJ(max)	-	-	-	150	掳C
Storage Temperature Range	TSTG	-	-65	-	150	掳C

Instructions for Use:

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the range of 10V to 20V.
   • Exceeding these limits can damage the device.

2. Bootstrap Capacitor Voltage (V_BOOT):

   • The bootstrap capacitor should be charged to a voltage between 10V and 20V.
   • This voltage is crucial for driving the high-side MOSFET gate.

3. Input Voltage Levels:

   • The input high-level voltage (V_IH) must be at least 2.0V.
   • The input low-level voltage (V_IL) must not exceed 0.8V.

4. Output Voltage Levels:

   • When sourcing current, the output high-level voltage (V_OH) should be around 13.5V.
   • When sinking current, the output low-level voltage (V_OL) should be around 0.4V.

5. Propagation Delay:

   • The propagation delay times (t_dHL and t_dLH) are typically around 70ns under standard conditions.
   • These delays should be considered when designing the timing of your control signals.

6. Dead-Time Insertion:

   • A dead-time of 1.0渭s is inserted to prevent cross-conduction between the high-side and low-side MOSFETs.
   • Adjust this time if necessary using external components.

7. Temperature Considerations:

   • The maximum operating junction temperature (T_J(max)) is 150掳C.
   • The storage temperature range (T_STG) is from -65掳C to 150掳C.
   • Ensure proper heat dissipation and avoid exceeding these temperature limits.

8. Handling and Storage:

   • Store the device in a dry, cool place.
   • Handle with care to avoid static discharge which can damage the device.

9. Circuit Design:

   • Ensure the bootstrap capacitor is properly sized and placed close to the IC to minimize parasitic inductance.
   • Use appropriate decoupling capacitors to stabilize the power supply.

10. Testing and Troubleshooting:

    • Test the device under controlled conditions to ensure it meets the specified parameters.
    • If issues arise, check for correct power supply levels, proper connections, and appropriate component values.

(For reference only)