Details
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| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Supply Voltage | Vcc | 2.7 | - | 3.6 | V | Operating supply voltage range |
| Standby Current | Icc | - | 1 | 5 | 渭A | Current consumption in standby mode |
| Active Current | Icc | - | 30 | 50 | mA | Current consumption during active operation |
| Programming Current | Ipp | 10 | - | 20 | mA | Maximum current required for programming |
| Erase Time | Teras | - | 4 | 6 | s | Time required to erase the entire chip |
| Page Program Time | Tpgm | - | 200 | 400 | 渭s | Time required to program one page (256 bytes) |
| Sector Erase Time | Tser | - | 10 | 20 | ms | Time required to erase one sector (64 Kbytes) |
| Block Erase Time | Tber | - | 50 | 100 | ms | Time required to erase one block (1 Mbyte) |
| Data Retention | - | - | 10 | - | years | Guaranteed data retention period |
| Operating Temperature Range | Ta | -40 | - | 85 | 掳C | Temperature range for normal operation |
| Storage Temperature Range | Tstg | -65 | - | 150 | 掳C | Temperature range for storage |
Instructions for Using AM29F800BB-70ED
Power Supply:
- Ensure that the supply voltage is within the specified range of 2.7V to 3.6V.
- Connect the Vcc pin to the power supply and GND to ground.
Initialization:
- Before any read or write operations, ensure the device is properly powered and initialized.
- Use the reset sequence if necessary to initialize the device.
Reading Data:
- Apply a low level to the /OE (Output Enable) pin to enable read operations.
- Set the address lines to the desired memory location.
- The data will be available on the data lines after the access time.
Writing Data:
- Apply a low level to the /WE (Write Enable) pin to initiate a write operation.
- Set the address lines to the desired memory location.
- Provide the data to be written on the data lines.
- Ensure the programming current (Ipp) is within the specified range of 10mA to 20mA.
Erasing Data:
- To erase the entire chip, set the appropriate command sequence and wait for the erase time (4 to 6 seconds).
- For sector or block erases, set the specific address and command, then wait for the respective erase time (10 to 20 ms for sectors, 50 to 100 ms for blocks).
Standby Mode:
- To enter standby mode, set both /OE and /WE to high.
- The device will consume minimal current (1 to 5 渭A).
Temperature Considerations:
- Operate the device within the temperature range of -40掳C to 85掳C.
- Store the device within the temperature range of -65掳C to 150掳C.
Data Retention:
- The device guarantees data retention for up to 10 years under normal operating conditions.
Handling and Storage:
- Handle the device with care to avoid static damage.
- Store the device in a dry, cool environment to prevent moisture damage.
Safety Precautions:
- Avoid exceeding the maximum ratings to prevent damage to the device.
- Follow proper grounding and handling procedures to avoid ESD (Electrostatic Discharge) damage.
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