AM29F800BB-70ED

AM29F800BB-70ED


Specifications
SKU
12593604
Details

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Parameter Symbol Min Typ Max Unit Description
Supply Voltage Vcc 2.7 - 3.6 V Operating supply voltage range
Standby Current Icc - 1 5 渭A Current consumption in standby mode
Active Current Icc - 30 50 mA Current consumption during active operation
Programming Current Ipp 10 - 20 mA Maximum current required for programming
Erase Time Teras - 4 6 s Time required to erase the entire chip
Page Program Time Tpgm - 200 400 渭s Time required to program one page (256 bytes)
Sector Erase Time Tser - 10 20 ms Time required to erase one sector (64 Kbytes)
Block Erase Time Tber - 50 100 ms Time required to erase one block (1 Mbyte)
Data Retention - - 10 - years Guaranteed data retention period
Operating Temperature Range Ta -40 - 85 掳C Temperature range for normal operation
Storage Temperature Range Tstg -65 - 150 掳C Temperature range for storage

Instructions for Using AM29F800BB-70ED

  1. Power Supply:

    • Ensure that the supply voltage is within the specified range of 2.7V to 3.6V.
    • Connect the Vcc pin to the power supply and GND to ground.
  2. Initialization:

    • Before any read or write operations, ensure the device is properly powered and initialized.
    • Use the reset sequence if necessary to initialize the device.
  3. Reading Data:

    • Apply a low level to the /OE (Output Enable) pin to enable read operations.
    • Set the address lines to the desired memory location.
    • The data will be available on the data lines after the access time.
  4. Writing Data:

    • Apply a low level to the /WE (Write Enable) pin to initiate a write operation.
    • Set the address lines to the desired memory location.
    • Provide the data to be written on the data lines.
    • Ensure the programming current (Ipp) is within the specified range of 10mA to 20mA.
  5. Erasing Data:

    • To erase the entire chip, set the appropriate command sequence and wait for the erase time (4 to 6 seconds).
    • For sector or block erases, set the specific address and command, then wait for the respective erase time (10 to 20 ms for sectors, 50 to 100 ms for blocks).
  6. Standby Mode:

    • To enter standby mode, set both /OE and /WE to high.
    • The device will consume minimal current (1 to 5 渭A).
  7. Temperature Considerations:

    • Operate the device within the temperature range of -40掳C to 85掳C.
    • Store the device within the temperature range of -65掳C to 150掳C.
  8. Data Retention:

    • The device guarantees data retention for up to 10 years under normal operating conditions.
  9. Handling and Storage:

    • Handle the device with care to avoid static damage.
    • Store the device in a dry, cool environment to prevent moisture damage.
  10. Safety Precautions:

    • Avoid exceeding the maximum ratings to prevent damage to the device.
    • Follow proper grounding and handling procedures to avoid ESD (Electrostatic Discharge) damage.
(For reference only)

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