IRF6644

IRF6644


Specifications
Details

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Parameter Symbol Test Conditions Min Typ Max Unit
Drain-source on-state resistance RDS(on) VGS = 10V, ID = 30A - 6.5 - m惟
Gate charge QG - - 49 - nC
Input capacitance Ciss VDS = 25V, f = 1 MHz - 1800 - pF
Output capacitance Coss VDS = 25V, f = 1 MHz - 350 - pF
Threshold gate voltage VGS(th) ID = 250渭A 2.0 2.5 3.0 V
Continuous drain current ID TC = 25掳C - 37 - A
Pulse drain current IDM TP = 10ms, 胃JA = 62掳C/W - 110 - A
Continuous drain-source voltage VDSS - - 60 - V
Gate-source voltage VGS - - 卤20 - V

Instructions for Use:

  1. Handling and Storage: The IRF6644 is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe practices. Store in original packaging until ready for use.

  2. Mounting: Ensure proper thermal management by mounting the device on a heatsink if operating near maximum ratings. Follow recommended PCB layout guidelines to minimize stray inductance.

  3. Biasing and Drive Requirements: Apply sufficient gate drive voltage to ensure low RDS(on). Typical VGS should be 10V for optimal performance. Avoid exceeding the maximum VGS rating of 卤20V.

  4. Switching Applications: For high-frequency switching applications, minimize gate resistor value to reduce switching losses but ensure stability and avoid ringing.

  5. Protection Circuits: Implement protection circuits such as flyback diodes for inductive loads and consider adding gate resistors to dampen oscillations.

  6. Safe Operating Area (SOA): Refer to the SOA graph in the datasheet to ensure operation within safe limits, especially under transient conditions.

  7. Derating: At elevated temperatures, derate the continuous drain current according to the temperature derating curve provided in the datasheet.

  8. Testing: When testing the device, adhere to the specified test conditions to accurately measure parameters like RDS(on) and threshold voltage.

For detailed specifications and more information, refer to the official datasheet from the manufacturer.

(For reference only)

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