Details

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BUY IPB039N10N3G https://www.utsource.net/itm/p/12594130.html

Parameter	Symbol	Value	Unit	Conditions/Notes
Collector-Emitter Voltage	V CES	1000	V	Maximum voltage
Collector-Base Voltage	V CBO	1000	V	Maximum voltage
Emitter-Base Voltage	V EBO	6	V	Maximum voltage
Continuous Collector Current	I C	39	A	Tc = 25掳C
Continuous Collector Current	I CM	24.8	A	Tc = 100掳C
Pulse Collector Current	I CM(p)	200	A	tp = 10 ms, Icm = 25掳C
Power Dissipation	Ptot	275	W	Tc = 25掳C
Junction Temperature	Tj op	-55 to 175	掳C	Operating range
Storage Temperature	Tstg	-55 to 150	掳C	Storage range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking when operating at high currents or power levels.
   • Handle with care to avoid damage to the device leads and body.

2. Electrical Connections:

   • Verify all connections are secure and correct before applying power.
   • Ensure the device is properly isolated from other circuit components to prevent short circuits.

3. Operating Conditions:

   • Do not exceed the maximum ratings provided in the parameter table.
   • Operate within specified temperature ranges to ensure reliable performance.

4. Testing:

   • When testing, use appropriate safety measures and equipment to protect against potential hazards.
   • Follow standardized procedures for testing semiconductor devices.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to prevent static damage.

6. Disposal:

   • Dispose of according to local regulations for electronic waste.
   • Recycle where possible to minimize environmental impact.

(For reference only)