Details

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BUY SKKH72/12E https://www.utsource.net/itm/p/12594136.html

Parameter	Description	Value	Unit
Device Type	Power MOSFET	-	-
Package	TO-220AB	-	-
Maximum Drain Current (Id)	Continuous Drain Current @ TC = 25°C	12	A
Peak Pulse Drain Current (Idm)	Non-repetitive Peak Pulse Current @ TC = 25°C	72	A
Drain-Source Breakdown Voltage (BVDSS)	Drain-Source Breakdown Voltage	700	V
Gate-Source Voltage (VGS)	Maximum Gate-Source Voltage	±20	V
On-State Resistance (RDS(on))	Max RDS(on) @ VGS = 10V, Id = 3.6A	1.4	Ω
Gate Charge (Qg)	Total Gate Charge	48	nC
Input Capacitance (Ciss)	Input Capacitance	1390	pF
Output Capacitance (Coss)	Output Capacitance	200	pF
Switching Characteristics	Turn-on Delay Time (td(on)) @ VGS = 10V, Id = 3.6A	20	ns
	Rise Time (tr) @ VGS = 10V, Id = 3.6A	32	ns
	Turn-off Delay Time (td(off)) @ VGS = 10V, Id = 3.6A	18	ns
	Fall Time (tf) @ VGS = 10V, Id = 3.6A	35	ns

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table.
   • Handle with care to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure proper heat dissipation by using a heatsink if necessary.
   • Follow recommended mounting torque for the screws to avoid mechanical stress.

3. Operating Conditions:

   • Operate within specified temperature ranges to ensure reliability and longevity.
   • Monitor operating currents and voltages to stay within safe operating areas (SOA).

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to protect against ESD.

5. Testing:

   • Test devices under controlled conditions before incorporating into final designs.
   • Verify all connections are secure and correct.

6. Application Notes:

   • Refer to application notes provided by the manufacturer for detailed design considerations.
   • Utilize protective circuits where necessary to safeguard against transient voltages and currents.

(For reference only)