MK48T08B-10

MK48T08B-10


Specifications
Details

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Parameter Description Value
Product Name MK48T08B-10
Type CMOS 8K x 8 Non-Volatile Static RAM (NVSRAM)
Organization 8K x 8
Vcc Operating Range 2.7V to 5.5V
Vbb Operating Range -12.0V to -13.2V
Data Retention Time 10 Years at 85掳C, 100 Years at 25掳C
Access Time 70ns (Typical)
Write Cycle Time 70ns
Endurance Cycles 1 Million
Package SOIC-16
Operating Temperature Range -40掳C to +85掳C

Instructions:

  1. Power Supply Connections:

    • Connect Vcc to the positive supply voltage within the operating range of 2.7V to 5.5V.
    • Connect Vbb to a negative supply voltage within the range of -12.0V to -13.2V for data retention.
  2. Data Retention:

    • Ensure that Vbb is maintained at the specified levels to retain data in non-volatile memory when Vcc is off or below the operating range.
  3. Read/Write Operations:

    • Perform read and write operations with a cycle time of 70ns to ensure data integrity and proper operation.
  4. Endurance:

    • The device can withstand up to 1 million write cycles without degradation of performance or data retention properties.
  5. Temperature Considerations:

    • Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance and longevity.
  6. Handling Precautions:

    • Handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
(For reference only)

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