Details

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BUY 12N50ES https://www.utsource.net/itm/p/12594857.html

Parameter	Value	Unit
Maximum Drain Voltage (VDS)	1200	V
Maximum Gate-Source Voltage (VGS)	±20	V
Maximum Drain Current (ID)	50	A
Maximum Power Dissipation (PD)	375	W
Total Gate Charge (QG)	160	nC
Input Capacitance (Ciss)	4900	pF
Output Capacitance (Coss)	220	pF
Reverse Transfer Capacitance (Crss)	180	pF
Threshold Voltage (Vth)	4.0 - 6.0	V
RDS(on) @ 25°C, VGS = 10V	≤ 3.5	mΩ
RDS(on) @ 100°C, VGS = 10V	≤ 5.0	mΩ

Instructions for Use:

1. Handling Precautions:

   • Ensure proper ESD protection during handling.
   • Avoid exceeding the maximum ratings specified.

2. Mounting:

   • Use appropriate thermal management techniques to handle power dissipation.
   • Ensure good electrical connections and secure mounting to prevent mechanical stress.

3. Operating Conditions:

   • Operate within the specified voltage and current limits to avoid damage.
   • Ensure adequate cooling if operating near maximum power dissipation.

4. Gate Drive:

   • Provide sufficient gate drive voltage to fully turn on the device and minimize RDS(on).
   • Consider the gate charge when designing the driving circuit to ensure fast switching.

5. Storage:

   • Store in a dry, cool environment away from direct sunlight and corrosive substances.

6. Testing:

   • Perform regular testing under controlled conditions to ensure reliable operation.
   • Refer to the datasheet for detailed test procedures and conditions.

(For reference only)