Details

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BUY 2SK940 https://www.utsource.net/itm/p/12594986.html

Below is the parameter table and instructions for the 2SK940 MOSFET.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	VDS	-	-	300	V	-
Gate-Source Voltage	VGS	-15	-	15	V	-
Continuous Drain Current	ID	-	2.5	3.5	A	TC = 25°C
Pulse Drain Current	ID(p)	-	7	10	A	tp = 10 ms, f ≤ 1 Hz
Total Dissipation	PT	-	-	40	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-
Storage Temperature Range	Tstg	-55	-	150	°C	-
Input Capacitance	Ciss	-	160	-	pF	VDS = 25V, f = 1 MHz
Output Capacitance	Coss	-	80	-	pF	VDS = 25V, f = 1 MHz
Transfer Conductance	gfs	-	0.4	-	S	VDS = 25V, ID = 2.5A
Threshold Voltage	VGS(th)	2	3	4	V	ID = 1 mA
On-State Resistance	RDS(on)	-	0.8	-	Ω	VGS = 10V, ID = 2.5A

Instructions

1. Handling Precautions:

   • ESD Protection: The 2SK940 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures, such as wrist straps and grounded work surfaces, when handling the device.
   • Temperature Management: Ensure that the junction temperature does not exceed 150°C to avoid thermal damage. Use heat sinks or other cooling methods if necessary.
   • Storage Conditions: Store the device in a dry environment within the temperature range of -55°C to 150°C.

2. Mounting and Soldering:

   • Soldering Temperature: Use a soldering iron with a temperature setting between 260°C and 300°C. Do not exceed 300°C to prevent damage to the device.
   • Soldering Time: Keep the soldering time to a minimum, ideally less than 10 seconds per connection.
   • Mechanical Stress: Avoid applying excessive mechanical stress to the leads during mounting. Use appropriate clamps and supports to ensure the device is securely mounted without causing damage.

3. Operational Considerations:

   • Gate-Source Voltage: Ensure that the gate-source voltage (V_GS) remains within the specified range of -15V to +15V to prevent gate oxide breakdown.
   • Drain-Source Voltage: The drain-source voltage (V_DS) should not exceed 300V to avoid breakdown and potential failure.
   • Current Limiting: Implement current limiting circuits to protect the device from exceeding the maximum continuous drain current (I_D) of 3.5A and the pulse drain current (I_D(p)) of 10A.

4. Testing and Measurement:

   • Threshold Voltage: Measure the threshold voltage (V_GS(th)) by applying a small drain current (1 mA) and noting the gate-source voltage at which the device begins to conduct.
   • On-State Resistance: Measure the on-state resistance (R_DS(on)) by applying a known gate-source voltage (10V) and a known drain current (2.5A), then measuring the voltage drop across the drain and source terminals.

By following these parameters and instructions, you can ensure the reliable operation and longevity of the 2SK940 MOSFET.

(For reference only)