Details

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BUY IRFB23N20D https://www.utsource.net/itm/p/12594993.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	170	-	m惟	VGS = 10V, ID = 5A
Gate-Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250渭A
Continuous Drain Current	ID	-	-	36	A	TC = 25掳C
Pulse Drain Current	IDM	-	-	180	A	t = 10ms, TC = 25掳C
Power Dissipation	PD	-	-	220	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • The IRFB23N20D is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.

2. Mounting:

   • Ensure good thermal contact between the device and the heatsink to maintain optimal operating temperatures.
   • Follow manufacturer guidelines for torque specifications when mounting screws.

3. Biasing:

   • Apply gate voltage within specified limits to avoid damage to the gate oxide layer.
   • Ensure that the gate-source voltage (VGS) does not exceed the maximum rating of 卤20V.

4. Operating Conditions:

   • Operate within the specified temperature range to ensure reliable performance.
   • For continuous operation, keep the junction temperature below the maximum rated value.

5. Pulse Operation:

   • When using in pulse mode, ensure that pulse duration and frequency do not cause excessive heating.

6. Storage:

   • Store in a dry, cool environment away from direct sunlight and sources of heat.

(For reference only)