Details

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BUY MTFC4GLDEA-0M WT https://www.utsource.net/itm/p/12596141.html

Parameter	Description
Part Number	MTFC4GLDEA-0M WT
Type	NAND Flash Memory
Density	4 Gb (512 MB)
VccQ Supply Voltage	1.8V
Interface	Toggle Mode DDR Interface
Data Rate	Up to 400 MT/s
Package Type	WFBGA (Wafer-Level Fine Pitch Ball Grid Array)
Operating Temperature	-40°C to +85°C
Endurance	Up to 3,000 Program/Erase Cycles
Retention	Data Retention up to 10 years at 25°C
ECC Requirement	Up to 24-bit ECC per 1KB
Dimensions	6 mm x 8 mm

Instructions for Use:

1. Power Supply: Ensure the VccQ supply voltage is set to 1.8V as required by the device.
2. Initialization: Follow the initialization sequence specified in the datasheet for proper setup.
3. Command Protocol: Use the command protocol compatible with the Toggle Mode DDR interface for read/write operations.
4. Error Correction: Implement an ECC algorithm that meets or exceeds the 24-bit ECC requirement per 1KB of data.
5. Environmental Conditions: Operate within the specified temperature range to ensure reliable performance and longevity.
6. Handling Precautions: Handle the component with care to avoid damage; follow ESD protection guidelines during assembly and handling.
7. Programming: Refer to the programming guide provided in the datasheet for detailed instructions on programming and erasing operations.

(For reference only)