Details

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BUY STMicroelectronics STGD7NC60HT4 https://www.utsource.net/itm/p/12596146.html

Parameter	Symbol	Min	Typ	Max	Unit
Breakdown Voltage (Collector-Emitter)	BVCEX	-	650	-	V
Continuous Collector Current	ICC	-	7	-	A
Pulsed Collector Current	ICM	-	14	-	A
Total Power Dissipation	PD	-	200	-	W
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Gate Charge	QG	-	90	-	nC
Turn-On Delay Time	tD(on)	-	80	-	ns
Rise Time	tR	-	35	-	ns
Turn-Off Delay Time	tD(off)	-	50	-	ns
Fall Time	tF	-	35	-	ns

Instructions for Use

1. Handling and Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress or damage to the leads.

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary.
   • Follow recommended PCB layout guidelines to minimize parasitic inductance and improve performance.

3. Electrical Connections:

   • Connect the collector, gate, and emitter terminals correctly.
   • Use appropriate gate drive circuits to ensure reliable switching.

4. Thermal Considerations:

   • Monitor the junction temperature to ensure it remains within the specified limits.
   • Use thermal paste between the device and heatsink to enhance heat dissipation.

5. Operational Limits:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Ensure the device operates within the specified temperature range to avoid damage.

6. Testing:

   • Perform initial testing under controlled conditions to verify correct operation.
   • Regularly inspect the device for signs of wear or damage.

7. Safety:

   • Always follow safety guidelines when handling high-voltage and high-current circuits.
   • Use appropriate personal protective equipment (PPE) when necessary.

For more detailed information, refer to the official datasheet from STMicroelectronics.

(For reference only)