Details

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BUY EN87C251SB16 https://www.utsource.net/itm/p/12596373.html

Parameter	Description	Value	Unit
Part Number	Full part identification	EN87C251SB16	-
Type	Device type	EEPROM	-
Memory Size	Total memory capacity	256 Kbit	-
Organization	Memory organization	32K x 8	bits
Voltage - Supply	Operating supply voltage range	1.7 to 3.6	V
Current - Active	Active current	2.0	mA
Current - Standby	Standby current	1.0	渭A
Speed	Access time	55	ns
Interface	Communication interface	SPI	-
Package	Physical package type	SOIC-8	-
Operating Temperature	Temperature range for operation	-40 to +85	掳C
Write Cycle Time	Time required for a write cycle	5	ms
Endurance	Guaranteed number of write/erase cycles	1,000,000	cycles
Data Retention	Duration data is retained without power	100	years

Instructions:

1. Power Supply: Ensure the device operates within the specified supply voltage range (1.7V to 3.6V) to prevent damage.
2. Communication Protocol: Use SPI protocol for interfacing with the EEPROM. Ensure correct configuration of SPI settings including clock speed and mode.
3. Write Operations: Before writing data, perform a read-modify-write sequence if necessary. Respect the write cycle time of 5ms to avoid data corruption.
4. Endurance Management: While the device supports up to 1 million write/erase cycles, implement wear-leveling algorithms in applications requiring frequent writes to extend device life.
5. Temperature Considerations: Operate within the temperature range (-40掳C to +85掳C) to ensure reliable performance.
6. Handling Precautions: Handle the component with care to avoid static damage; use appropriate ESD protection measures.

(For reference only)