Details

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BUY DD151N20K https://www.utsource.net/itm/p/12596382.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	-	200	V	Continuous
Gate-Source Voltage	VGS	-15	-	15	V	Continuous
Drain Current	ID	-	15	-	A	@ VGS = 10V, TJ = 25°C
Power Dissipation	PD	-	-	150	W	@ TC = 25°C
Junction Temperature	TJ	-55	-	175	°C	Operating Range
Storage Temperature	TSTG	-65	-	150	°C	Storage Range
Thermal Resistance	RθJC	-	0.8	-	°C/W	Junction to Case
Input Capacitance	Ciss	-	1300	-	pF	@ VDS = 200V, f = 1 MHz
Output Capacitance	Coss	-	100	-	pF	@ VDS = 200V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	300	-	pF	@ VDS = 200V, f = 1 MHz
Turn-On Delay Time	td(on)	-	12	-	ns	@ ID = 15A, VGS = 10V, RG = 1Ω
Rise Time	tr	-	24	-	ns	@ ID = 15A, VGS = 10V, RG = 1Ω
Turn-Off Delay Time	td(off)	-	15	-	ns	@ ID = 15A, VGS = 10V, RG = 1Ω
Fall Time	tf	-	35	-	ns	@ ID = 15A, VGS = 10V, RG = 1Ω

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use a thermal compound between the device and the heatsink to improve thermal conductivity.

2. Gate Drive:

   • Apply a gate-source voltage (V_GS) within the specified range to control the MOSFET.
   • Use a gate resistor (R_G) to control the switching speed and reduce EMI.

3. Operating Conditions:

   • Keep the junction temperature (T_J) within the operating range to avoid thermal damage.
   • Ensure the drain-source voltage (V_DS) does not exceed the maximum rating to prevent breakdown.

4. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range.

5. Handling:

   • Handle with care to avoid mechanical stress on the leads and body.
   • Use proper ESD protection to prevent damage from static electricity.

6. Testing:

   • Perform all tests under controlled conditions to ensure accurate results.
   • Refer to the datasheet for specific test conditions and procedures.

(For reference only)