Details

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BUY 2SC2021R https://www.utsource.net/itm/p/12596445.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	80	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	15	A
DC Current Gain	hFE	20	100	400	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	300	-	MHz
Power Dissipation	PD	-	-	65	W	TC = 25掳C
Junction Temperature	TJ	-20	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is handled carefully to avoid damage to leads and body.
   • Mount the transistor in a way that ensures good thermal contact if heat dissipation is critical.

2. Biasing and Operation:

   • Operate within specified voltage and current limits to prevent damage.
   • Use appropriate biasing circuits to maintain the transistor in the desired operating region (cut-off, active, saturation).

3. Thermal Considerations:

   • For applications where the transistor will dissipate significant power, ensure adequate heatsinking to keep the junction temperature within safe limits.

4. Storage and Environment:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.
   • Protect from electrostatic discharge (ESD) during handling and storage.

5. Testing:

   • Test the device parameters under conditions similar to those listed in the table to ensure reliable operation.
   • Verify all connections are secure and correct before applying power.

(For reference only)