Details
BUY BUK9Y19-55B/DS https://www.utsource.net/itm/p/12596505.html
| Parameter | Symbol | Min | Typical | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | - | 42 | - | A | @ Tc = 25掳C, VGS = 10V, tD = 1s |
| Pulse Drain Current | Ipp | - | 126 | - | A | @ Tc = 25掳C, VGS = 10V, tpp = 100渭s, duty cycle = 1% |
| Drain-Source Voltage | VDS | - | - | 55 | V | |
| Gate-Source Voltage | VGS | -20 | - | 15 | V | |
| Gate Charge | QG | - | 88 | - | nC | @ VDS = 55V, VGS = 10V, ID = 1A |
| Input Capacitance | Ciss | - | 3750 | - | pF | @ VDS = 55V, VGS = 0V |
| Output Capacitance | Coss | - | 750 | - | pF | @ VDS = 55V, VGS = 0V |
| Reverse Transfer Capacitance | Crss | - | 1150 | - | pF | @ VDS = 55V, VGS = 0V |
| RDS(on) | RDS(on) | - | 4.5 | - | m惟 | @ VGS = 10V, ID = 42A, Tc = 25掳C |
| Total Power Dissipation | PD | - | - | 220 | W | @ Tc = 25掳C |
| Junction Temperature | TJ | -20 | - | 175 | 掳C | |
| Storage Temperature | Tstg | -55 | - | 150 | 掳C |
Instructions for Use:
Mounting and Handling:
- Ensure proper handling to avoid damage to the device.
- Use appropriate heat sinks to manage thermal dissipation.
Electrical Connections:
- Connect the drain (D) to the high-voltage side of the circuit.
- Connect the source (S) to the low-voltage side or ground.
- Apply the gate (G) voltage relative to the source to control the MOSFET.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure the junction temperature does not exceed 175掳C.
- For continuous operation, keep the drain current within the rated limits.
Thermal Management:
- Use a heatsink with adequate thermal resistance to maintain the junction temperature within safe limits.
- Consider forced air cooling or other cooling methods for high-power applications.
Gate Drive:
- Use a gate driver circuit to provide the necessary gate voltage.
- Ensure the gate voltage is within the specified range to avoid damage or improper operation.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle with ESD precautions to avoid static discharge damage.
Testing:
- Perform initial testing at lower power levels to ensure proper operation before full-scale deployment.
- Monitor temperature and performance during testing to ensure reliability.
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