Details
BUY FDS4559(5pcs) https://www.utsource.net/itm/p/12596506.html
| Parameter | Description |
|---|---|
| Part Number | FDS4559 |
| Quantity | 5 pcs |
| Type | N-Channel Enhancement Mode MOSFET |
| Package Type | TO-252 (DPAK) |
| Vds (Drain-Source Voltage) | ±60V |
| Vgs (Gate-Source Voltage) | ±20V |
| Rds(on) (On-Resistance) | 120 mΩ (Typical @ Vgs = 10V, Id = 1.7A) |
| Id (Continuous Drain Current) | 3.8A (Ta=25°C), 2.2A (Tc=25°C) |
| Power Dissipation (Pd) | 1.2W (Ta=25°C), 2.1W (Tc=25°C) |
| Operating Temperature Range | -55°C to +150°C |
| Storage Temperature Range | -65°C to +150°C |
Instructions for Use:
- Handling Precautions: The FDS4559 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
- Mounting: Ensure that the component is securely mounted on a suitable heatsink if operating at high current or power levels to maintain optimal temperature performance.
- Biasing: Apply gate-source voltage within the specified range to avoid damage to the device. Typical operation uses a Vgs of 10V for full enhancement.
- Testing: Before final assembly, it is recommended to test the MOSFET in a controlled environment to ensure it meets the required specifications.
- Soldering: Follow standard soldering practices for surface mount devices. Avoid excessive heat during soldering to prevent thermal damage.
For detailed application notes and further technical information, refer to the manufacturer’s datasheet.
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