Details

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BUY 2N3392 https://www.utsource.net/itm/p/12597150.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	IC = 0	-		40	V
Emitter-Base Voltage	V(BR)EBO	IE = 0	-		6	V
Collector-Base Voltage	V(BR)CBO	IC = 0	-		40	V
Collector Current	IC		-	200		mA
Base Current	IB		-	20		mA
Total Device Dissipation	PD	TJ = 25掳C	-		350	mW
Junction Temperature	TJ		-		150	掳C
Storage Temperature	TSTG		-55		150	掳C

Instructions for Use:

1. Handling Precautions: The 2N3392 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting to maintain heat dissipation within specified limits. Avoid exceeding the maximum junction temperature.
3. Biasing: When biasing the transistor, ensure that the base current does not exceed the maximum allowable value to prevent damage.
4. Operation Voltage: Do not exceed the maximum collector-emitter or collector-base voltages to avoid breakdown.
5. Storage: Store in a dry place within the specified storage temperature range to prevent damage.
6. Applications: Suitable for general-purpose switching and amplification applications where low power consumption is required.

(For reference only)