Details

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BUY FQP4N90C https://www.utsource.net/itm/p/12597167.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	90	-	V	-
Gate-Source Voltage	VGS	-15	-	15	V	-
Continuous Drain Current	ID	-	28	-	A	TC = 25掳C
Continuous Drain Current	ID	-	17.5	-	A	TC = 100掳C
Power Dissipation	PTOT	-	160	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • The FQP4N90C is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.

2. Mounting:

   • Ensure proper heat sinking to manage power dissipation, especially when operating at high currents or in high ambient temperatures.
   • Follow recommended PCB layout guidelines to minimize parasitic inductance and ensure reliable operation.

3. Biasing:

   • Apply gate-source voltage (V_GS) within the specified range to avoid damaging the gate oxide.
   • For optimal performance, keep V_GS between 10V and 15V.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Use thermal vias and a heatsink to improve heat dissipation.

5. Testing:

   • Before final assembly, test the device under conditions similar to those expected in the application.
   • Verify that all electrical parameters meet the specifications provided in the table.

6. Storage:

   • Store the device in a dry, cool place within the storage temperature range (-55掳C to 150掳C).
   • Keep the device in its original packaging until ready for use to protect against moisture and static damage.

(For reference only)