Details
BUY 2N7002KDW(10pcs) https://www.utsource.net/itm/p/12597195.html
| Parameter | Description |
|---|---|
| Part Number | 2N7002KDW(10pcs) |
| Type | N-Channel Enhancement Mode MOSFET |
| VDS (Max Drain-Source Voltage) | 60V |
| VGS (Max Gate-Source Voltage) | ±20V |
| RDS(on) (On-Resistance) | 5.5Ω @ VGS = 10V, ID = 1A |
| ID (Continuous Drain Current) | 200mA @ TC = 25°C |
| PD (Total Power Dissipation) | 340mW @ TC = 25°C |
| fT (Transition Frequency) | 150MHz |
| Qg (Total Gate Charge) | 10nC |
| Package Type | SOT-23 |
| Operating Temperature Range | -55°C to +150°C |
| Quantity | 10 pieces |
Instructions:
- Handling Precautions: The 2N7002KDW is sensitive to ESD (Electrostatic Discharge). Use proper ESD protection when handling the device.
- Soldering: Ensure that the soldering temperature does not exceed the maximum junction temperature of the device. Recommended soldering temperature is 260°C for a duration of 10 seconds.
- Mounting: Ensure correct orientation during mounting to avoid damage or incorrect operation. Refer to the datasheet for pin configuration.
- Testing: Before integrating into the final application, test the MOSFET in a controlled environment to ensure it meets the required specifications.
- Storage: Store in a dry and cool place, preferably in anti-static packaging to prevent damage.
- Application: Suitable for use in switching applications, signal processing, and low-power circuits.
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