2SC2751

2SC2751

Category: Transistors

Specifications
Details

BUY 2SC2751 https://www.utsource.net/itm/p/12597225.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO IC = 0 - - 40 V
Collector-Base Voltage VCBO IE = 0 - - 60 V
Emitter-Base Voltage VEBO IC = 0 -5 - -6 V
Collector Current IC VCE = 30V - 1 2 A
Base Current IB VCE = 30V, IC = 1A - 0.05 0.1 A
DC Current Gain hFE IC = 150mA, VCE = 5V 100 300 700 -
Transition Frequency fT IC = 150mA, VCE = 5V - 250 - MHz
Storage Temperature Tstg - -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SC2751 with care to avoid damage to its pins and body.
    • Ensure proper heat sinking if operating near maximum power dissipation.
  2. Biasing:

    • For optimal performance, bias the transistor in the active region using appropriate base resistors to control the base current (IB).
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to ensure reliability.
  4. Testing:

    • When testing or measuring parameters, use conditions as close as possible to those specified in the parameter table to get accurate results.
  5. Storage:

    • Store in a dry place away from direct sunlight and extreme temperatures to prevent degradation of performance.
  6. Soldering:

    • Solder quickly at a temperature not exceeding 300°C for no more than 10 seconds to avoid thermal damage.
  7. Applications:

    • Suitable for general-purpose switching and amplification applications in consumer electronics, automotive, and industrial equipment.
(For reference only)

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